By Mitiko Miura-Mattausch
ISBN-10: 9812568646
ISBN-13: 9789812568649
This quantity offers a well timed description of the newest compact MOS transistor types for circuit simulation. the 1st new release BSIM3 and BSIM4 types that experience ruled circuit simulation within the final decade aren't any longer in a position to characterizing all of the vital good points of recent sub-100nm MOS transistors. This booklet discusses the second one new release MOS transistor versions which are now in pressing call for and being introduced into the preliminary part of producing purposes. It considers how the versions are to incorporate the whole drift-diffusion conception utilizing the outside power variable within the MOS transistor channel as a way to provide one characterization equation.
Contents:
- Semiconductor gadget Physics
- Basic Compact Surface-Potential version of the MOSFET
- Advanced MOSFET Phenomena Modeling
- Capacitances
- Leakage Currents and Junction Diode
- Modeling of Phenomena vital for RF functions
- Summary of HiSIM s version Equations, Parameters, and Parameter-Extraction strategy.
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Extra info for The physics and modeling of MOSFETS: surface-potential model HiSIM
Sample text
101) The depletion width W is then determined by eliminating E0 from Eqs. 101). 102) where the built-in potential Vbi can be calculated by Eq. 83). The depletion lengths in p and n regions can be derived from Eqs. 103) dn = 2 Vbi = qND W 2 NA /ND Vbi . 21 shows the depletion layer widths of an abrupt p-n junction formed in silicon as a function of NA for fixed ND = 1016 cm−3 . For the case of NA = ND (= 1016 cm−3 ), depletion layer sizes of both the p and n sides are the same, which is a fairly trivial case.
For the same reason, a diffusive hole current flows in the opposite direction. These two diffusive currents can be dammed up by the internal electric field created due to the depletion region. As shown in Fig. 17 (b), the Fermi energies along the complete crossing between n and p region are required to lie on a straight line under thermal equilibrium, which is the condition for which the electrostatic potential and the carrier densities have to be calculated. 1 P -N Junction in Thermal Equilibrium In this section we aim to determine the potential profile and the carrier densities of the p-n junction in thermal equilibrium.
April 24, 2008 12:29 WSPC/Book Trim Size for 9in x 6in HiSIM˙book Semiconductor Device Physics 7 atoms in the crytal symmetry configuration with the atoms on the surface of the finite-size cluster terminated by hydrogen atom to avoid the surface discontinuity that form electron states that are localized on the surface, known as surface states. When the complete crystal structure is built up, the set of bonding orbitals forms a group of energetic states called the valence band, and the set of antibonding orbitals forms another group of energetic states called the conduction band.
The physics and modeling of MOSFETS: surface-potential model HiSIM by Mitiko Miura-Mattausch
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