By P. Lloyd (auth.), William Marvin Coughran Jr., Julian Cole, Peter Llyod, Jacob K. White (eds.)
ISBN-10: 1461384079
ISBN-13: 9781461384076
ISBN-10: 1461384095
ISBN-13: 9781461384090
Semiconductor and integrated-circuit modeling are a massive a part of the high-technology "chip" undefined, whose high-performance, reasonably cheap microprocessors and high-density reminiscence designs shape the root for supercomputers, engineering workstations, computing device pcs, and different sleek info home equipment. there are a selection of differential equation difficulties that needs to be solved to facilitate such modeling. This two-volume set covers 3 subject parts: strategy modeling and circuit simulation in Volume I and equipment modeling in Volume II. technique modeling offers the geometry and impurity doping features which are necessities for machine modeling; machine modeling, in flip, offers static present and brief cost features had to specify the so-called compact versions hired by way of circuit simulators. The target of those books is to collect scientists and mathematicians to debate open difficulties, algorithms to unravel such, and to shape bridges among the various disciplines involved.
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Extra info for Semiconductors: Part I
Example text
Predicted and Measured Ring Oscillator Frequencies 8. Current trends and conclusions. The following summarizes the major observations and trends discussed in this paper: • TCAD is maturing. Several vendors have entered the market place. • Process simulation tools require better physical models and numerical methods. • Above-silicon simulation and visualization are increasingly important. • Device and interconnect models are being improved to meet challenges for submicron design. • Circuit simulation will become more robust and efficient for large circuits with extensive interconnects.
K. P. Leburton, and U. Ravaioli, Kluwer Academic Publishers, 1991. L. ENGL, R. K. DIRKS, MEDUSA-A Simulator for Modular Circuits, IEEE Trans. Computer-Aided Design, vol. CAD-I, April 1982. R. K. GUMMEL, A Boundary Technique for Calculation of Distributed Resistance, IEEE Trans. Electron Devices, vol. ED-17, Oct. 1970. W. C. RENNICK, A Compact IGFET Model-ASIM, IEEE Trans. Computer-Aided Design, vol. CAD-7, Sept. 1988. W. NAGEL, ADVICE for Circuit Simulation, Proc. ISCAS, Houston, 1980. L. C. -C.
Ion distribution functions in weakly-collisional direct-current (DC) sheaths and collisionless radio-frequency (RF) sheaths are discussed from the viewpoint of kinetic theory. Analytical formulae for the ion distributions in a self-consistent field are obtained for weakly-collisional sheaths, and are shown to be in good agreement with results from Monte Carlo simulations. A detailed knowledge of the angular and energy distribution of the ion flux impinging on a surface is of interest in the plasma-processing of semiconductor materials.
Semiconductors: Part I by P. Lloyd (auth.), William Marvin Coughran Jr., Julian Cole, Peter Llyod, Jacob K. White (eds.)
by Anthony
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