Precision Temperature Sensors in CMOS Technology (Analog by Micheal A.P. Pertijs, Johan Huijsing PDF

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Extra resources for Precision Temperature Sensors in CMOS Technology (Analog Circuits and Signal Processing)

Sample text

In these figures, the normalization of VDD = 1 V, RL = 1 Ω is selected and all other parameters are calculated using the standard Class E design equations [Raab77]. 37(b). If the transistor is switched on from 0 to π, the voltage at time π will be equal to zero. 109. 37. 35. (a) capacitor voltage and (b) magnified version where it is assumed that the switch is closed from 0 to π and from 2π to 3π. property of this waveform occurs at 2π, since at that point the switch voltage and it first derivative both become zero again.

Besides the fact that Class B achieves a higher peak efficiency, more important is that the efficiency is linearly dependent on Vo , in contrast to the quadratic dependency for Class A. To conclude, the Class B amplifier requires twice the amount of voltage swing at the gate of the transistor compared to a Class A amplifier. 25. The Class B amplifier: (a) normalized drain voltage and drain current (dashed line) and (b) normalized power dissipation. words, the gain of a Class B amplifier is only half the gain of a Class A.

17. (a) Normalized drain voltage and drain current (dashed line) and (b) normalized power dissipation for a Class A power amplifier. 8. It should be stressed that the 50 % efficiency of the Class A amplifier only occurs at the maximum (idealized) output swing. If an amplitude modulated signal is applied, the amplitude of the RF sinewave at the output Vo will change according to the envelope signal A(t). 5). Furthermore, the assumption of a maximal amplitude of VDD will no longer hold if the knee-region1 of the transistor is taken into account.

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