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Download PDF by Dr. Volkan Kursun, Dr. Eby G. Friedman(auth.): Multi-Voltage CMOS Circuit Design

By Dr. Volkan Kursun, Dr. Eby G. Friedman(auth.)

ISBN-10: 0470010231

ISBN-13: 9780470010235

ISBN-10: 0470033371

ISBN-13: 9780470033371

This publication provides an in-depth remedy of assorted strength aid and pace enhancement innovations in accordance with a number of provide and threshold voltages. a close dialogue of the assets of energy intake in CMOS circuits could be supplied when focusing totally on opting for the mechanisms through which sub-threshold and gate oxide leakage currents are generated. The authors current a finished assessment of cutting-edge dynamic, static provide and threshold voltage scaling concepts and talk about the professionals and cons of offer and threshold voltage scaling techniques.Content:
Chapter 1 creation (pages 1–17):
Chapter 2 assets of energy intake in CMOS ICs (pages 19–43):
Chapter three offer and Threshold Voltage Scaling options (pages 45–84):
Chapter four Low?Voltage energy offers (pages 85–97):
Chapter five greenback Converters for On?Chip Integration (pages 99–113):
Chapter 6 Low?Voltage Swing Monolithic DC–DC Conversion (pages 115–126):
Chapter 7 excessive enter Voltage Step?Down DC–DC Converters (pages 127–138):
Chapter eight sign move in ICs with a number of offer Voltages (pages 139–146):
Chapter nine Domino common sense with Variable Threshold Voltage Keeper (pages 147–170):
Chapter 10 Subthreshold Leakage present features of Dynamic Circuits (pages 171–186):
Chapter eleven Sleep swap twin Threshold Voltage Domino common sense (pages 187–204):
Chapter 12 Conclusions (pages 205–210):

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Extra resources for Multi-Voltage CMOS Circuit Design

Sample text

4, respectively. 1 DYNAMIC SWITCHING POWER The dominant component of power consumption in a typical CMOS circuit is the dynamic switching power [4], [9], [12], [21], [23], [27]–[29], [36]. The dynamic switching power is dissipated while charging or discharging the parasitic capacitances during the voltage transitions of the nodes within a CMOS circuit. The dynamic switching power is independent of the type of switching gate and the shape of the input waveform (input rise and fall times). The dynamic switching power is dependent only on the supply voltage, the switching frequency, the initial and final voltages, and the equivalent capacitance of a switching node Multi-Voltage CMOS Circuit Design V.

In CMOS circuits, the node voltages are typically full swing between ground and VDD. 2 LEAKAGE POWER A transistor switch is essentially a resistive–capacitive network between the power supply and ground. Due to the non-ideal off-state characteristics (a finite resistance) of a transistor, current is drawn from a power supply even when a transistor operates in the cut-off region. The leakage currents are dominated by weak inversion and reverse biased p–n junction diode currents in long channel devices [4], [9], [36], [37], [48].

2. 1 Subthreshold Leakage Current A MOSFET operates in the weak inversion (subthreshold) region when the magnitude of the gate-to-source voltage is less than the magnitude of the threshold voltage [44]. In the weak inversion mode, current conduction between the source and drain (the subthreshold leakage current) is primarily due to diffusion of the carriers [4], [9], [23], [44], [48]. The transistor offstate current (IOFF) is the drain current when the gate-to-source voltage is zero [4], [37]. IOFF is affected by the threshold voltage, channel length, channel width, depletion width beneath the channel area, channel/surface doping profiles, drain/source junction depths, gate oxide thickness, supply voltage, and the junction temperature [37].

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Multi-Voltage CMOS Circuit Design by Dr. Volkan Kursun, Dr. Eby G. Friedman(auth.)


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