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Additional resources for Microscopy of semiconducting materials: proceedings of the 14th conference, April 11-14, 2005, Oxford, UK

Example text

The amount of InGaN deposited for each sample was approximately 5 monolayers (ML). The samples were annealed at growth temperature (710 °C) for varying lengths of time, under an NH3 flow, with N2 as carrier gas. They were then examined ex situ using a Dimension 3100 atomic force microscope (AFM) to assess the changes in morphology caused by the anneal process. Photoluminescence (PL) measurements were also performed at room temperature on the epilayers. 50""TGUWNVU" AFM images of samples annealed for a range of times are shown in Fig.

Although stacking faults are found in the wetting layer, no misfit dislocations were observed. To grow pure wurtzite InxGa1-xN islands, growth conditions were changed to reduce the In concentration. 5x1011 cm-2 were observed. From HRTEM along the <11-20> ZA all islands are wurtzite. The islands contain many, almost equidistant misfit dislocations with Burgers vector component in <1-100> direction similar to sample A (Fig. 4). No pronounced faceting of the islands is observed (Fig. 5). x was derived from images recorded using optimum imaging conditions for strain state analysis as described above.

What is also apparent, is that as the InGaN growth time is increased the intensity of the bright regions increases. This may be attributed to the increasing strain contribution within the InGaN WL and suggests that more indium is being incorporated with increasing InGaN growth time. This is not surprising as our SIMS analysis of InGaN quantum wells shows that the amount of indium incorporated in the well increases with well thickness. 60""FKUEWUUKQP" The data shows that after approximately 31 s the nanostructure density saturates and plateaus, while the modal height remains stable.

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