By Zhong Yuan Chang, Willy M. C. Sansen (auth.)
ISBN-10: 1441951245
ISBN-13: 9781441951243
ISBN-10: 1475721269
ISBN-13: 9781475721263
Analog circuit layout has grown in value simply because such a lot of circuits can't be learned with electronic innovations. Examples are receiver front-ends, particle detector circuits, and so forth. really, all circuits which require excessive precision, excessive velocity and occasional strength intake want analog suggestions. excessive precision additionally wishes low noise. a lot has been written already on low noise layout and optimization for low noise. little or no is accessible besides the fact that if the resource isn't really resistive yet capacitive or inductive as is the case with antennas or semiconductor detectors. This e-book offers layout recommendations for these kinds of optimization. This booklet is therefore meant to begin with for engineers on senior or graduate point who've already designed their first operational amplifiers and wish to head additional. it really is specifically for engineers who don't need only a circuit however the top circuit. layout recommendations are provided that bring about the easiest functionality inside of a definite expertise. furthermore, this can be performed for all vital applied sciences corresponding to bipolar, CMOS and BiCMOS. Secondly, this ebook is meant for engineers who are looking to comprehend what they're doing. The layout innovations are meant to supply perception. during this method, the layout thoughts can simply be prolonged to different circuits to boot. additionally, the layout concepts shape a primary step in the direction of layout automation. Thirdly, this booklet is meant for analog layout engineers who are looking to get to grips with either bipolar and CMOS applied sciences and who are looking to examine extra approximately which transistor to decide on in BiCMOS.
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Extra resources for Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies
Example text
46) Chapter 2. 49) cop = lIrn (C n + C,J, which is related to the transistor cop = 211frl130' where 130 is the dc value of 13 and cut off frequency IT by: Since both if and Vf depend on the basic noise source lj and ie, some correlation must exist between them. 49) show that only at very low frequencies where the l/f noise dominates and at very high frequencies where transistor I3(jco) falls off the correlation effects are significant. In the middle frequency range, the correlation is not significant so that it can be neglected which results in dramatic simplification in noise calculation.
Each event causes a random current pulse to occur at the external terminal. 35]. 42) where ID is the dc current, Is is inverse saturation current, Gj is the junction conductance and Gjo is its lower frequency value. 42) reduces to the familiar shot noise expression 2qlD and 2qls, respectively. 7. Under forward active condition where the B-E junction is forward biased and the B-C junction is reverse biased, the collector current is the result of the minority carriers injection form the emitter E to the base B and diffusion away from B to be collected by the collector.
Since the noise source of the core amplifier is in series with the signal source, its noise contribution can be minimized by minimizing the noise source itself. b is simulated with SPICE. 1 which agree well with the theoretical calculated ones. 5. MEASUREMENTS OF IIF NOISE IN MOSFETS AND BJTS From the discussion on the l/f noise in MOSFET and BJT transistors in the previous sections it is clear that in order to characterize the low frequency noise in a CMOS and a BJT process, it is necessary to carry out some kind of noise measurement.
Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies by Zhong Yuan Chang, Willy M. C. Sansen (auth.)
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