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Additional resources for Ion Implantation: Equipment and Techniques: Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982

Sample text

The top figure shows the ray trace for the SURIM system with a 1 ma 100 KeV beam and the second lens turned off. The second trace shows the beam neglecting the self-field of the beam. This shows that space charge cannot be neglected in the design of transport systems above 1 ma. We wish to acknowledge the invaluable technical assistance of K. R. Wal dorf without whom this system might never have worked. F. E. Mynard, E. J. G. Stephens Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, England Abstract: A new 400 keV Research Implanter at the University of Surrey is described.

0% , IAC =25A ~. Sheet-resistivity distribution of the implanted 10Omm-diameter wafer. 6_ Dependence of dose non-uniformity on scanning-field intensity indicated by coil current, IAC In order to study the dependence of the efficiency on wafer-temperature rise, the wafer temperature during implantation was measured as a function of beam power. 5keV). However, the energy-conversion efficiency was found to be the same as that of lower-temperature implantation. Since the usual implant energy is 15keV with this implanter, the wafer temperature is maintained under 100°C.

Insulator. Figure 3 shows the control panel for the system. At the extreme left is the shielded test room containing the system . V. supply. filament control. the six controls and 12 meters optically coupled through the fiber optics system to the power supplies in the pressure tank shown in Figure 1. The right rack contains the interlock and vacuum control systems and the microprocessor that controls the positioning table. V. column. but are now immune to all but extreme flashovers. Figure 4 shows an arqon 3 ma.

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