By H.C. Liu and Federico Capasso (Eds.)
ISBN-10: 0080864600
ISBN-13: 9780080864600
ISBN-10: 0127521712
ISBN-13: 9780127521718
Given that its inception in 1966, the sequence of numbered volumes often called Semiconductors and Semimetals has unique itself in the course of the cautious number of recognized authors, editors, and individuals. The Willardson and Beer sequence, because it is celebrated, has succeeded in generating various landmark volumes and chapters. not just did a lot of those volumes make an effect on the time in their booklet, yet they remain well-cited years after their unique unencumber. lately, Professor Eicke R. Weber of the college of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known professional within the box of semiconductor fabrics, will extra give a contribution to carrying on with the sequence' culture of publishing well timed, hugely appropriate, and long-impacting volumes. a number of the contemporary volumes, similar to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice can be maintained or even expanded.Reflecting the really interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and equipment engineers in glossy undefined.
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Additional info for Intersubband Transitions in Quantum Wells: Physics and Device Applications I
Example text
Note that an experimentally relevant 3D absorption coefficient can be obtained here by dividing aZDby the sample thickness, which is identical to the second expression in Eq. (39) for 0 = 90". , 1979). A particularly elegant and useful way is the so-called “critical incidence coupling” proposed and demonstrated by Keilmann (1994), where radiation is coupled into the sample at the critical angle for total reflection, which forces the p-polarized light to be exactly perpendicular to the QW layer.
100 90 $ 80 3 70 v * 100 A 60 50 40 0 40 80 120 160 Electric field (kV/cm = mV/lOOA) FIG. 10. Stark shift of the intersubband absorption. The energy separation of the two lowest subbands for GaAs-Al,,,Ga,~,As quantum wells with different thicknesses (as indicated) is plotted vs electric field. Note the transition from quadratic to linear behavior. MANFED HELM 28 L=120 A F=1OOkV/cm -50 50 0 7. 11. Potential profile, energy levels, and wave functions of a 120-A-wide GaAsAl,~,Ga,~,As quantum well with an electric field of 100kV/cm.
For quantum wells with E , , around 100 meV and n, 10” cm-’ it is a minor correction (see example following). + - - -= 1 THEBASICPHYSICS OF INTERSUBBAND TRANSITIONS 49 The same is true for the second term, fi, which acts to reduce the absorption frequency, and is due to the Coulomb interaction between the excited electron and the quasi-hole left behind in the ground subband. Since this is similar to an excitonic electron-hole pair, the effect is called the exciton correction, or the final-state interaction.
Intersubband Transitions in Quantum Wells: Physics and Device Applications I by H.C. Liu and Federico Capasso (Eds.)
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