By Harry Veendrick
ISBN-10: 1461368537
ISBN-13: 9781461368533
ISBN-10: 1461541336
ISBN-13: 9781461541332
These days, CMOS applied sciences account for nearly ninety% of all built-in circuits (ICs). This booklet offers a vital creation to CMOS ICs. The contents of this publication are dependent upon a prior booklet, entitled 'MOS Ics', which used to be released in Dutch and English by way of Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively.
This ebook includes cutting-edge fabric, but in addition specializes in points of scaling as much as and past 0.1 mm CMOS applied sciences and designs. It truly describes the elemental CMOS working ideas and provides massive perception into numerous points of layout, implementation and alertness. unlike different works in this subject, the publication explores all linked disciplines of deep-submicron CMOS ICs, together with physics, layout, expertise and packaging, low-power layout and sign integrity. The textual content relies upon in-house Philips courseware, which, to this point, has been accomplished by way of greater than 1500 engineers. rigorously established and enriched by means of hundreds of thousands of figures, photograhs and in-depth routines, the publication is well-suited for the aim of self-study.
This moment variation includes a few corrections and is totally up to date with appreciate to the former one. within the one-and-a-half years of its existance, the 1st variation has already been utilized in greater than ten in-house classes. a number of typing error and so forth, which confirmed up in the course of those classes, were corrected. additionally, many of the chapters were up-to-date with cutting-edge fabric. Numbers that describe traits and roadmaps were up-to-date to boot, to permit the contents of this ebook be important for a minimum of one other 5 years.
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Additional info for Deep-Submicron CMOS ICs: From Basics to ASICs
Sample text
11), Ids would reach a maximum value and then decrease for increasing Vds. 16, however, it was stated that the current remains constant for an increasing Vds once Vds > Vgs - VT. The transistor has two operating regions which are characterised by corresponding expressions for Ids. These regions and their Ids expressions are defined as follows: 1. The linear or triode region. 0 < Vds < Vgs - VT. 13) 2. The saturation region. Vds 2: Vgs - VT. Ids = ~. 14), Ids is independent of Vds in the saturation region.
The channel end then coincides with the drain-substrate junction. 14. I~ ........... e. Vds=Vgs-VT 20 The saturation region The channel end no longer coincides with the drain when Vds is larger han Vgs - VT. 15. -- -0---- - -- - --- - --- 8 8 8 8 8 8 8 8 ... ·----___ ,8 8 8 8 8 8 -----------.... e. Vds> Vgs - VT The voltage Vx at the end point x of the inversion layer equals Vgs - VT . Therefore, VT is the voltage difference between the gate and channel at position x. If this pinch-off point is considered to be the imaginary drain of the transistor, then Ids is determined by the voltage Vx = Vgs - VT.
To provide a better understanding of these diagrams, Poisson's law is first applied to the different regions of the MOS capacitor. These regions include the aluminium gate, the Si0 2 insulator, the depletion layer in silicon and the p-type silicon substrate. Poisson's law is used to investigate the charge distribution Q(z), the electric field E(z) and the electric potential ¢(z) in these regions as a function of the distance z from the Si-Si02 interface. 2) electrical potential at position z; distance from the Si - Si02 interface; space charge; dielectric constant.
Deep-Submicron CMOS ICs: From Basics to ASICs by Harry Veendrick
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