By Kagermann H., Koehler W.
ISBN-10: 3922410073
ISBN-13: 9783922410072
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Phys. Rev. B 60: R2204–R2207, 1999. FORMATION OF TWO-DIMENSIONAL Si/Ge NANOSTRUCTURES OBSERVED BY STM Bert Voigtl¨¨ ander Institut f¨ fur Schichten und Grenzfl¨ ¨chen, Forschungszentrum J¨ Julich GmbH. de Abstract The growth of kinetically self-organized two-dimensional (2D) islands is described for Si/Si(111) epitaxy. The island size distribution for this system was measured using scanning tunneling microscopy (STM). The potential formation of thermodynamically stable strained islands of a specific size is discussed.
Shchukin and D. Bimberg. Spontaneous ordering of nanostructures on crystal surfaces. Rev. Mod. Phys. 71: 1125–1171, 1999. [5] J. Tersoff and F. K. LeGoues. Competing relaxation mechanisms in strained layers. Phys. Rev. Lett. 72: 3570–3573, 1994. [6] B. A. Joyce, T. S. Jones and J. G. Belk. Reflection high-energy electron diffraction scanning tunneling microscopy study of InAs growth on the three low Quantum Dots in the InAs/GaAs System 21 index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation.
B 65: art. no. 115318, 2002. [13] K. Reuter and M. Scheffler. First-principles thermodynamics for oxidation catalysis: Surface phase diagrams and catalytically interesting regions. Phys. Rev. Lett. 90: art. no. 046103, 2003. [14] F. Bechstedt. Principles of Surface Physics (Springer, Berlin, 2003). [15] P. Kratzer, E. Penev, and M. Scheffler. Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Appl. Surf. Sci. 216: 436–446, 2003. [16] R. J. Needs, R.
Aufgabensammlung Theoretische Physik, Elektrodynamik by Kagermann H., Koehler W.
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