By Gabriel Rincon-Mora
ISBN-10: 0071608931
ISBN-13: 9780071608930
Master Analog Integrated-Circuit Design
Design, learn, and construct linear low-dropout (LDO) regulator ICs in bipolar, CMOS, and biCMOS semiconductor procedure applied sciences. This authoritative consultant deals a distinct emphasis on embedded LDO layout. via intuitive factors and distinct illustrations, the publication exhibits how one can placed those theories to paintings growing analog ICs for the most recent transportable, battery-powered devices.
Analog IC layout with Low-Dropout Regulators information the total product improvement cycle-from defining goals and choosing elements to blueprinting, assembling, and fine-tuning functionality. paintings with semiconductors, hire detrimental suggestions, deal with fluctuating rather a lot, and embed regulators in ICs. additionally, you will how you can construct prototypes, practice assessments, and combine system-on-chip (SoC) performance. detect how to:
- Design, try out, and gather BJT-, MOSFET-, and JFET-based linear regulators
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Use present mirrors, buffers, amplifiers, and differential pairs
- Integrate suggestions loops, unfavourable suggestions, and keep watch over limits
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Maintain an self reliant, sturdy, noise-free, and predictable output voltage
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Compensate for low enter present and vast voltage swings
- Optimize accuracy, potency, battery lifestyles, and integrity
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Implement overcurrent safety and thermal-shutdown features
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Establish energy and working limits utilizing characterization options
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Extra info for Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering)
Example text
Depletion region). dpl) that results, as in parallel-plate capacitors, increases with increasing crosssectional areas (A’s) and decreasing depletion widths. , vD is zero) capacitance per unit area, which is a process and junction-dependent parameter—Cjo″ depends on the doping densities of both materials, but more so on the less doped side because it normally dominates the overall width. Note the peripheral sidewall of the device contributes additional (and similar) capacitance. dpl continues to increase.
Dpl in forward-bias conditions, and vice versa. Ultimately, however, irrespective of the region of operation, junction capacitance Cj exists across intrinsic diode D, as depicted in the complete large-signal model shown in Fig. 8a. Extrinsic Device + Vd Cj RP p n p n Maneuvering technology to build a diode necessarily introduces parasitic junctions and components to the intrinsic device. To start, the diode is a series combination of oppositely doped silicon pieces each of which introduces series parasitic resistances (RP and RN in Fig.
There is no net current flow), diffusion and drift currents are equal and opposite. The energy-band diagram shown in Fig. 5b is useful in describing the operation of the device because it conveys important information about its physical properties and electrical state. To start, the top line denotes the onset of the conduction band EC, the energy level above which electrons are free to roam as charge carriers, and the bottom line the onset of the valence band EV, the energy level below which electrons are strongly bound to the atom.
Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering) by Gabriel Rincon-Mora
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